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| RFG30P06, RFP30P06, RF1S30P06SM Data Sheet July 1999 File Number 2437.3 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They are designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09834. Features * 30A, 60V * rDS(ON) = 0.065 * Temperature Compensating PSPICE(R) Model * Peak Current vs Pulse Width Curve * UIS Rating Curve * 175oC Operating Temperature * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Information PART NUMBER RFG30P06 RFP30P06 RF1S30P06SM PACKAGE TO-247 TO-220AB TO-263AB BRAND RFG30P06 RFP30P06 Symbol D G F1S30P06 S NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e. RF1S30P06SM9A. Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (BOTTOM SIDE METAL) DRAIN (FLANGE) JEDEC TO-220AB SOURCE DRAIN GATE JEDEC TO-263AB DRAIN (FLANGE) GATE SOURCE 4-133 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE(R) is a registered trademark of MicroSim Corporation. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 RFG30P06, RFP30P06, RF1S30P06SM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFG30P06, RFP30P06 RF1S30P06SM -60 -60 20 30 Refer to Peak Current Curve Refer to UIS Curve 135 0.9 -55 to 175 300 260 UNITS V V V A Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Single Pulse Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Deratlng Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg W W/oC oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS IGSS rDS(ON) t(ON) td(ON) tr td(OFF) tf t(OFF) Qg(TOT) Qg(-10) Qg(TH) CISS COSS CRSS RJC RJA TO-220, TO-263 TO-247 VGS = 0 to -20V VGS = 0 to -10V VGS = 0 to -2V VDD = -48V, ID = 30A, RL = 1.6, IG(REF) = 1.6mA TEST CONDITIONS ID = 250A, VGS = 0V VGS = VDS, ID = 250A VDS = -60V, VGS = 0V VDS = 0.8 x Rated BVDSS, TC = 150oC VGS = 20V ID = -30A, VGS = -10V (Figure 9) VDD = -30V, ID = 15A, RL = 2.00, VGS = -10V RG = 6.25 (Figure 13) MIN -60 -2 TYP 15 23 28 18 140 70 5.5 3200 800 175 MAX -4 -1 -25 100 0.065 80 100 170 85 6.6 1.11 62 30 UNITS V V A A nA ns ns ns ns ns ns nC nC nC pF pF pF oC/W oC/W oC/W Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at -10V Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient VDS = 25V, VGS = 0V, f = 1MHz (Figure 12) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time NOTE: 2. Pulse test: pulse width 300s maximum, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). SYMBOL VSD tRR TEST CONDITIONS ISD = -30A ISD = -30A, dISD/dt = -100A/s MIN TYP MAX -1.5 150 MAX V ns 4-134 RFG30P06, RFP30P06, RF1S30P06SM Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID , DRAIN CURRENT (A) 0 25 50 75 100 125 150 175 -30 0.8 0.6 0.4 0.2 0 TC , CASE TEMPERATURE (oC) Unless Otherwise Specified -40 -20 -10 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 2 1 ZJC, NORMALIZED THERMAL IMPEDANCE 0.5 0.2 PDM 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 100 101 FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE -200 -100 ID , DRAIN CURRENT (A) 100s IDM , PEAK CURRENT (A) -500 VGS = -20V VGS = -10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT CAPABILITY AS FOLLOWS: 1ms -10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) TC = 25oC TJ = MAX RATED -1 -10 VDS , DRAIN TO SOURCE VOLTAGE (V) 10ms 100ms DC -100 175 - T C I = I 25 --------------------- 150 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION -10 10-5 TC = 25oC 10-4 10-3 10-2 10-1 100 101 -1 -100 t, PULSE WIDTH (s) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY 4-135 RFG30P06, RFP30P06, RF1S30P06SM Typical Performance Curves -100 IAS , AVALANCHE CURRENT (A) STARTING TJ = 25oC ID, DRAIN CURRENT (A) -60 Unless Otherwise Specified (Continued) -75 VGS = -20V VGS = -10V VGS = -8V VGS = -7V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TC = 25oC VGS = -6V -15 VGS = -4.5V 0 -2 -4 -6 -8 -10 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = -5V -45 -10 STARTING TJ = 150oC -30 If R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) If R 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] -1 0.1 0 1 10 tAV, TIME IN AVALANCHE (ms) 100 NOTE: Refer to Intersil Application Notes AN9321 and AN9322, FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY FIGURE 7. SATURATION CHARACTERISTICS IDS(ON), DRAIN TO SOURCE CURRENT (A) -75 NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDD = -15V -55oC -45 175oC -30 25oC 2 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = -10V, ID = 30A 1.5 -60 1 0.5 -15 0 0 -2 -4 -6 -8 -10 VGS, GATE TO SOURCE VOLTAGE (V) 0 -80 -40 0 40 80 120 160 200 TJ , JUNCTION TEMPERATURE (oC) FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 2 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = VDS, ID = 250A 2 ID = 250A 1.5 NORMALIZED GATE THRESHOLD VOLTAGE 1.5 1 1 0.5 0.5 0 -80 -40 0 40 80 120 160 200 0 -80 -40 0 40 80 120 160 200 TJ , JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 4-136 RFG30P06, RFP30P06, RF1S30P06SM Typical Performance Curves 4000 CISS C, CAPACITANCE (pF) 3000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGS Unless Otherwise Specified (Continued) VDS, DRAIN TO SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) -60 VDD = BVDSS -45 RL = 2.0 IG(REF) = -1.6mA VGS = -10V -30 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS DRAIN SOURCE VOLTAGE 0 IG(REF) IG(ACT) 0 t, TIME (s) 80 IG(REF) IG(ACT) GATE SOURCE VOLTAGE VDD = BVDSS -7.5 -10 2000 COSS 1000 CRSS 0 0 -5 -10 -15 -5 -15 -2.5 -20 -25 20 VDS , DRAIN TO SOURCE VOLTAGE (V) NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms VDS tAV L VARY tP TO OBTAIN REQUIRED PEAK IAS RG 0 + VDD VDD 0V VGS DUT tP IAS 0.01 IAS tP BVDSS VDS FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS tON td(ON) tOFF td(OFF) tr tf 10% 10% VDS RL VGS 0 VDD VGS RGS + VDS VGS 0 90% 90% DUT 10% 50% PULSE WIDTH 90% 50% FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS 4-137 RFG30P06, RFP30P06, RF1S30P06SM Test Circuits and Waveforms (Continued) VDS RL 0 VGS = -2V VGS VDD + Qg(TH) VDS -VGS Qg(-10) VDD Qg(TOT) 0 Ig(REF) VGS = -10V DUT Ig(REF) VGS = -20V FIGURE 18. GATE CHARGE TEST CIRCUIT FIGURE 19. GATE CHARGE WAVEFORMS 4-138 RFG30P06, RFP30P06, RF1S30P06SM PSPICE Electrical Model .SUBCKT RFP30P06 2 1 3; REV 8/21/94 CA 12 8 3.23e-9 CB 15 14 3.23e-9 CIN 6 8 3.08e-9 DBODY 5 7 DBDMOD DBREAK 7 11 DBKMOD DPLCAP 10 6 DPLCAPMOD EBREAK 5 11 17 18 -77.3 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 5 10 8 6 1 EVTO 20 6 8 18 1 IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 4.92e-9 LSOURCE 3 7 4.60e-9 MOS1 16 6 8 8 MOSMOD M=0.99 MOS2 16 21 8 8 MOSMOD M=0.01 12 GATE 1 9 ESG 10 RSCL2 8 6 + 5 DRAIN 2 LDRAIN RSCL1 + 51 5 51 DPLCAP EBREAK ESCL 50 RDRAIN + 17 18 DBODY 11 EVTO 20 + 18 8 LGATE RGATE 6 VTO + 16 21 MOS1 DBREAK MOS2 RIN CIN 8 RSOURCE LSOURCE 7 3 SOURCE S1A 13 8 S1B CA EGS 14 13 S2A 15 S2B 13 + 6 8 EDS CB + 6 8 14 IT RBREAK 17 18 RVTO 19 VBAT + RBREAK 17 18 RBKMOD 1 RDRAIN 50 16 RDSMOD 39.85e-3 RGATE 9 20 2.34 RIN 6 8 1e9 RSCL1 5 51 RSCLMOD 1e-6 RSCL2 5 50 1e3 RSOURCE 8 7 RDSMOD 2.56e-3 RVTO 18 19 RVTOMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 -0.81 - - ESCL 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/114,5))} .MODEL DBDMOD D (IS=4.7e-13 RS=1.31e-2 TRS1=1.39e-4 TRS2=-4.77e-6 CJO=2.85e-9 TT=8.81e-8) .MODEL DBKMOD D (RS=2.23e-1 TRS1=1.97e-3 TRS2=-2.37e-5) .MODEL DPLCAPMOD D (CJO=0.78e-9 IS=1e-30 N=10) .MODEL MOSMOD PMOS (VTO=-3.75 KP=10.83 IS=1e-30 N=10 TOX=1 L=1u W=1u) .MODEL RBKMOD RES (TC1=9.08e-4 TC2=-1.72e-6) .MODEL RDSMOD RES (TC1=5.01e-3 TC2=1.02e-5) .MODEL RSCLMOD RES (TC1=2.09e-3 TC2=5.88e-7) .MODEL RVTOMOD RES (TC1=-2.99e-3 TC2=1.40e-6) .MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=3.4 VOFF=1.4) .MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.4 VOFF=3.4) .MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=1.2 VOFF=-3.8) .MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.8 VOFF=1.2) .ENDS NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature Options; authors, William J. Hepp and C. Frank Wheatley. 4-139 RFG30P06, RFP30P06, RF1S30P06SM All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 4-140 |
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